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Silicon-On-Insulator Technology: Materials to VLSI by Colinge, J. -P - Picture 1 of 1
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Silicon-On-Insulator Technology: Materials to VLSI by Colinge, J. -P

by Colinge, J. -P | HC | Good
ThriftBooks
  • (3699086)
US $15.05
Condition:
Good
“Pages can have notes/highlighting. Spine may show signs of wear. ~ ThriftBooks: Read More, ”... Read moreabout condition
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eBay item number:375137501584
Last updated on Sep 14, 2024 15:23:46 PDTView all revisionsView all revisions

Item specifics

Condition
Good
A book that has been read but is in good condition. Very minimal damage to the cover including scuff marks, but no holes or tears. The dust jacket for hard covers may not be included. Binding has minimal wear. The majority of pages are undamaged with minimal creasing or tearing, minimal pencil underlining of text, no highlighting of text, no writing in margins. No missing pages. See the seller’s listing for full details and description of any imperfections. See all condition definitionsopens in a new window or tab
Seller Notes
“Pages can have notes/highlighting. Spine may show signs of wear. ~ ThriftBooks: Read More, ...
Binding
Hardcover
Weight
0 lbs
Product Group
Book
IsTextBook
Yes
ISBN
9780792391500
Subject Area
Technology & Engineering
Publication Name
Silicon-On-Insulator Technology : Materials to Vlsi
Publisher
Springer
Item Length
9.2 in
Subject
Electronics / Semiconductors, Electronics / Circuits / Vlsi & Ulsi, Electronics / Circuits / General, Electrical, Materials Science / Electronic Materials
Publication Year
1991
Series
The Springer International Series in Engineering and Computer Science Ser.
Type
Textbook
Format
Hardcover
Language
English
Author
Jean-Pierre Colinge
Item Weight
40.6 Oz
Item Width
6.1 in
Number of Pages
Xii, 228 Pages

About this product

Product Identifiers

Publisher
Springer
ISBN-10
0792391500
ISBN-13
9780792391500
eBay Product ID (ePID)
108177165

Product Key Features

Number of Pages
Xii, 228 Pages
Publication Name
Silicon-On-Insulator Technology : Materials to Vlsi
Language
English
Subject
Electronics / Semiconductors, Electronics / Circuits / Vlsi & Ulsi, Electronics / Circuits / General, Electrical, Materials Science / Electronic Materials
Publication Year
1991
Type
Textbook
Subject Area
Technology & Engineering
Author
Jean-Pierre Colinge
Series
The Springer International Series in Engineering and Computer Science Ser.
Format
Hardcover

Dimensions

Item Weight
40.6 Oz
Item Length
9.2 in
Item Width
6.1 in

Additional Product Features

Intended Audience
Scholarly & Professional
LCCN
90-029327
Dewey Edition
20
Series Volume Number
132
Number of Volumes
1 vol.
Illustrated
Yes
Dewey Decimal
621.381/52
Table Of Content
1 -- Introduction.- 2 -- SOI Materials.- 3 -- SOI Materials Characterization.- 4 -- SOI CMOS Technology.- 5 -- The SOI MOSFET.- 6 -- Other SOI Devices.- 7 -- The SOI MOSFET Operating in a Harsh Environment.- 8 -- SOI Circuits.
Synopsis
5. 2. Distinction between thick- and thin-film devices . . . . . . . . . . . . . . . . . . . . 109 5. 3. I-V Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 5. 3. 1. Threshold voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 5. 3 . 2. Body effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 8 5. 3. 3. Short-channel effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 5. 3. 4. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 24 5. 4. Transconductance and mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 1 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 2. Mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 5. 5. Subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 5. 6. Impact ionization and high-field effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 5. 6. 1. Kink effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 39 5. 6. 2. Hot-electron degradation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 5. 7. Parasitic bipolar effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 5. 7. 1. Anomalous subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 45 5. 7. 2. Reduced drain breakdown voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 5. 8. Accumulation-mode p-channel MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 CHAPTER 6 - Other SOl Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 9 6. 1. Non-conventional devices adapted from bulk . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 6. 1. 1. COMFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 6. 1. 2. High-voltage lateral MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 6 1 6. 1. 3. PIN photodiode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 6. 1. 4. JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 6. 2. Novel SOl devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 1. Lubistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
LC Classification Number
TK7867-7867.5

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