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MG75J1BS11 Toshiba Power IGBT Module 75A 600V 200W-

Original Text
MG75J1BS11 Toshiba Power IGBT Module 75A 600V 200W
sofitronicgmbh
(316)
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EUR 35.00
ApproximatelyUS $40.60
or Best Offer
Condition:
New
3 available
Breathe easy. Returns accepted.
Shipping:
EUR 120.00 (approx US $139.20) DHL Paket International.
Located in: Berlin, Germany
Delivery:
Estimated between Tue, Oct 28 and Fri, Nov 14 to 94104
Estimated delivery dates - opens in a new window or tab include seller's handling time, origin ZIP Code, destination ZIP Code and time of acceptance and will depend on shipping service selected and receipt of cleared paymentcleared payment - opens in a new window or tab. Delivery times may vary, especially during peak periods.
Returns:
Seller does not accept returns.
Payments:
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eBay item number:374943070758
Last updated on Sep 28, 2025 16:44:32 PDTView all revisionsView all revisions

Item specifics

Condition
New: A brand-new, unused, unopened, undamaged item in its original packaging (where packaging is ...
Maximaler DC Kollektorstrom
-1 A
Maximale Kollektor-Basis Spannung
600 V
Maximale Basis-Emitter Sättigungsspannung
-1,1 V
Transistor-Typ
Leistungstransistor
Herstellernummer
MG75J1BS11, MG75J1BS1, MG75J1BS, MG75J1B, MG75J1, MG75J, MG75
Marke
Toshiba
Produktart
IGBT
Anzahl der Elemente pro Chip
1
Maximale Verlustleistung
200 W
Kollektor-Emitter-Spannung
600 V
Category

Item description from the seller

Seller business information

VAT number: DE 289104694
About this seller

sofitronicgmbh

100% positive feedback•1.7K items sold

Joined Jul 2018
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Detailed seller ratings

Average for the last 12 months
Accurate description
5.0
Reasonable shipping cost
4.7
Shipping speed
4.9
Communication
5.0

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