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Si Detectors and Characterizati on for HEP and Photon Science Experiment: How to
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Located in: Fairfield, Ohio, United States
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eBay item number:364699145956
Item specifics
- Condition
- ISBN-13
- 9783030195304
- Type
- NA
- Publication Name
- NA
- ISBN
- 9783030195304
- Publication Year
- 2019
- Format
- Hardcover
- Language
- English
- Book Title
- Si Detectors and Characterization for HEP and Photon Science Experiment : How to Design Detectors by TCAD Simulation
- Item Length
- 9.3in
- Publisher
- Springer International Publishing A&G
- Genre
- Technology & Engineering, Computers, Science
- Topic
- Measurement, Cad-Cam, Physics / Nuclear
- Item Width
- 6.1in
- Item Weight
- 16.8 Oz
- Number of Pages
- Xvii, 183 Pages
About this product
Product Information
This book reviews the HL-LHC experiments and the fourth-generation photon science experiments, discussing the latest radiation hardening techniques, optimization of device & process parameters using TCAD simulation tools, and the experimental characterization required to develop rad-hard Si detectors for x-ray induced surface damage and bulk damage by hadronic irradiation. Consisting of eleven chapters, it introduces various types of strip and pixel detector designs for the current upgrade, radiation, and dynamic range requirement of the experiments, and presents an overview of radiation detectors, especially Si detectors. It also describes the design of pixel detectors, experiments and characterization of Si detectors. The book is intended for researchers and master's level students with an understanding of radiation detector physics. It provides a concept that uses TCAD simulation to optimize the electrical performance of the devices used in the harsh radiation environment of the colliders and at XFEL.
Product Identifiers
Publisher
Springer International Publishing A&G
ISBN-10
3030195309
ISBN-13
9783030195304
eBay Product ID (ePID)
14038760101
Product Key Features
Book Title
Si Detectors and Characterization for HEP and Photon Science Experiment : How to Design Detectors by TCAD Simulation
Format
Hardcover
Language
English
Topic
Measurement, Cad-Cam, Physics / Nuclear
Publication Year
2019
Genre
Technology & Engineering, Computers, Science
Number of Pages
Xvii, 183 Pages
Dimensions
Item Length
9.3in
Item Width
6.1in
Item Weight
16.8 Oz
Additional Product Features
Number of Volumes
1 Vol.
Lc Classification Number
Qc787.P3
Table of Content
Development OF Si DETECTORS FOR THE CMS LHC Experiments.- Physics and Technology of Si Detectors.-Performance of MCz Si Material for p+nn+ and n+pp+ Si Sensor Design: Status and Development for HL-LHC: Status and Development for HL-LHC.- Development OF RADIATION HARD PIXEL DETECTORS FOR THE EUROPEAN XFEL.- T-CAD Simulation for the designing of detectors.- Development of Radiation Hard p+n Si Pixel Sensors for the European XFEL.- Analysis & Optimal Design of Radiation Hard p+n Si Pixel Detector for the Next generation Photon Science Experiments.- CapacitanceS in p+n silicon pixel sensors using 3-D TCAD simulation approach.-CHARACTERIZATION OF SI DETECTORS.- Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL.- Si Detector for HEP and Photon Science Experiments: How to Design Detectors by TCAD Simulation.- Appendices.
Copyright Date
2019
Illustrated
Yes
Item description from the seller
Seller assumes all responsibility for this listing.
eBay item number:364699145956
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I was pleasantly surprised by how soon I received this textbook given that it shipped from outside the U.S. It was packaged well with no damage. The price was right. And I greatly appreciated the communication informing me where the book was shipping from and including a tracking number. Overall, a positive experience, - online shopping the way it should be. I've bought books from this seller several times now without any complaints and will surely buy from them again. Thanks a lot!