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Advanced Texts in Physics Ser.: High-Resolution X-Ray Scattering : From Thin Films to Lateral Nanostructures by Vaclav Holy, Ullrich Pietsch and Tilo Baumbach (2004, Hardcover)
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About this product
Product Identifiers
PublisherSpringer New York
ISBN-100387400923
ISBN-139780387400921
eBay Product ID (ePID)30215215
Product Key Features
Number of PagesXvi, 408 Pages
Publication NameHigh-Resolution X-Ray Scattering : from Thin Films to Lateral Nanostructures
LanguageEnglish
Publication Year2004
SubjectPhysics / Optics & Light, Materials Science / Thin Films, Surfaces & Interfaces, Radiation, Nanotechnology & Mems, Materials Science / Electronic Materials
FeaturesRevised
TypeTextbook
Subject AreaTechnology & Engineering, Science
AuthorVaclav Holy, Ullrich Pietsch, Tilo Baumbach
SeriesAdvanced Texts in Physics Ser.
FormatHardcover
Dimensions
Item Weight30.3 Oz
Item Length9.3 in
Item Width6.1 in
Additional Product Features
Edition Number2
Intended AudienceScholarly & Professional
LCCN2003-070360
Dewey Edition22
Number of Volumes1 vol.
IllustratedYes
Dewey Decimal530.4175
Edition DescriptionRevised edition
Table Of Content1 Elements for Designing an X-Ray Diffraction Experiment.- 2 Diffractometers and Reflectometers.- 3 Scans and Resolution in Angular and Reciprocal Space.- 4 Basic Principles.- 5 Kinematical Theory.- 6 Dynamical Theory.- 7 Semikinematical Theory.- 8 Determination of Layer Thicknesses of Single Layers and Multilayers.- 9 Lattice Parameters and Strains in Epitaxial Layers and Multilayers.- 10 Diffuse Scattering From Volume Defects in Thin Layers.- 11 X-Ray Scattering by Rough Multilayers.- 12 X-Ray Scattering by Artificially Lateral Semiconductor Nanostructures.- 13 Strain Analysis in Periodic Nanostructures.- 14 X-Ray Scattering from Self-Organized Structures.- References.
SynopsisDuring the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has grown as a result of the development of the semiconductor industry and the increasing interest in material research of thin layers of magnetic, organic, and other materials. For example, optoelectronics requires a subsequent epitaxy of thin layers of different semiconductor materials. Here, the individuallayer thicknesses are scaled down to a few atomic layers in order to exploit quantum effects. For reasons of electronic and optical confinement, these thin layers are embedded within much thicker cladding layers or stacks of multilayers of slightly different chemical composition. It is evident that the interface quality of those quantum weHs is quite important for the function of devices. Thin metallic layers often show magnetic properties which do not ap pear for thick layers or in bulk material. The investigation of the mutual interaction of magnetic and non-magnetic layers leads to the discovery of colossal magnetoresistance, for example. This property is strongly related to the thickness and interface roughness of covered layers., During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has grown as a result of the development of the semiconductor industry and the increasing interest in material research of thin layers of magnetic, organic, and other materials. For example, optoelectronics requires a subsequent epitaxy of thin layers of different semiconductor materials. Here, the individuallayer thicknesses are scaled down to a few atomic layers in order to exploit quantum effects. For reasons of electronic and optical confinement, these thin layers are embedded within much thicker cladding layers or stacks of multilayers of slightly different chemical composition. It is evident that the interface quality of those quantum weHs is quite important for the function of devices. Thin metallic layers often show magnetic properties which do not ap- pear for thick layers or in bulk material. The investigation of the mutual interaction of magnetic and non-magnetic layers leads to the discovery of colossal magnetoresistance, for example. This property is strongly related to the thickness and interface roughness of covered layers.
LC Classification NumberTA418.7-418.76
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