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About this product
Produktinformation
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.Produktkennzeichnungen
ISBN-103211405372
ISBN-139783211405376
eBay Product ID (ePID)30037310
Produkt Hauptmerkmale
VerlagSpringer Vienna, Springer Wien
Erscheinungsjahr2003
Anzahl der Seiten324 Seiten
PublikationsnameAnalysis And Simulation of Heterostructure Devices
SpracheEnglisch
ProduktartLehrbuch
AutorRüdiger Quay
ReiheComputational Microelectronics
FormatGebundene Ausgabe
Zusätzliche Produkteigenschaften
HörbuchNo
MitautorVassil Palankovski
InhaltsbeschreibungHc Runder Rücken Kaschiert
Item Height2cm
Item Length24cm
Item Weight653g
Item Width16cm
