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Item specifics

Condition
Brand New: A new, unread, unused book in perfect condition with no missing or damaged pages. See the ...
Binding
SOFTCOVER
Returns
30 days - No Question asked policy
International ISBN
9788177589771
Contents
SAME as in US edition
Packing
Shrinkwrapped- Box Packed
Product Type
INTERNATIONAL EDITION
Cover Picture
Please see 2nd Image for actual book
Cover Design
May differ from the Picture shown here
Edition
1
ISBN
9780201543933
Subject Area
Technology & Engineering
Publication Name
Semiconductor Device Fundamentals
Publisher
Pearson Education, Prentice Hall PTR
Item Length
9.6 in
Subject
Electronics / Semiconductors, Electronics / General
Publication Year
1995
Type
Textbook
Format
Hardcover
Language
English
Item Height
2.2 in
Author
Robert Pierret
Item Weight
61.2 Oz
Item Width
8 in
Number of Pages
816 Pages
Category

About this product

Product Information

Although roughly a half-century old, the field of study associated with semiconductor devices continues to be dynamic and exciting. New and improved devices are being developed at an almost frantic pace. While the number of devices in complex integrated circuits increases and the size of chips decreases, semiconductor properties are now being engineered to fit design specifications. Semiconductor Device Fundamentals serves as an excellent introduction to this fascinating field. Based in part on the Modular Series on Solid State Devices, this textbook explains the basic terminology, models, properties, and concepts associated with semiconductors and semiconductor devices. The book provides detailed insight into the internal workings of "building block" device structures and systematically develops the analytical tools needed to solve practical device problems.

Product Identifiers

Publisher
Pearson Education, Prentice Hall PTR
ISBN-10
0201543931
ISBN-13
9780201543933
eBay Product ID (ePID)
62594

Product Key Features

Number of Pages
816 Pages
Publication Name
Semiconductor Device Fundamentals
Language
English
Subject
Electronics / Semiconductors, Electronics / General
Publication Year
1995
Type
Textbook
Author
Robert Pierret
Subject Area
Technology & Engineering
Format
Hardcover

Dimensions

Item Height
2.2 in
Item Weight
61.2 Oz
Item Length
9.6 in
Item Width
8 in

Additional Product Features

Intended Audience
College Audience
LCCN
95-017387
Dewey Edition
22
Illustrated
Yes
Dewey Decimal
537.622
Lc Classification Number
Tk7871.85.P484 1996
Table of Content
I. SEMICONDUCTOR FUNDAMENTALS. 1. Semiconductors -- A General Introduction. General Material Properties. Crystal Structure. Crystal Growth. 2. Carrier Modeling. The Quantization Concept. Semiconductor Models. Carrier Properties. State and Carrier Distributions. Equilibrium Carrier Concentrations. 3. Carrier Action. Drift. Diffusion. Recombination -- Generation. Equations of State. Supplemental Concepts. 4. Basics of Device Fabrication. Fabrication Processes. Device Fabrication Examples. R1. Part I Supplement and Review. Alternative/Supplemental Reading List. Figure Sources/Cited References. Review List of Terms. Part I Review Problem Sets and Answers. IIA. PN JUNCTION DIODES. 5. PN Junction Electrostatics. Preliminaries. Quantitative Electrostatic Relationships. 6. PN Junction Diode -- I-V Characteristics. The Ideal Diode Equation. Deviations from the Ideal. Special Considerations. 7. PN Junction Diode -- Small-Signal Admittance. Introduction. Reverse-Bias Junction Capacitance. Forward-Bias Diffusion Admittance. 8. PN Junction Diode -- Transient Response. Turn-Off Transient. Turn-On Transient. 9. Optoelectronic Diodes. Introduction. Photodiodes. Solar Cells. LEDs. IIB. BJTS AND OTHER JUNCTION DEVICES. 10. BJT Fundamentals. Terminology. Fabrication. Electrostatics. Introductory Operational Considerations. Performance Parameters. 11. BJT Static Characteristics. Ideal Transistor Analysis. Deviations from the Ideal. Modern BJT Structures. 12. BJT Dynamic Response Modeling. Equivalent Circuits. Transient (Switching) Response. 13. PNPN Devices. Silicon Controlled Rectifier (SCR). SCR Operational Theory. Practical Turn-on/Turn-off Considerations. Other PNPN Devices. 14. MS Contacts and Schottky Diodes. Ideal MS Contacts. Schottky Diode. Practical Contact Considerations. R2. Part II Supplement and Review. Alternative/Supplemental Reading List. Figure Sources/Cited References. Review List of Terms. Part II Review Problem Sets and Answers. III. FIELD EFFECT DEVICES. 15. Field Effect Introduction -- the J-FET and MESFET. General Introduction. J-FET. MESFET. 16. MOS Fundamentals. Ideal Structure Definition. Electrostatics -- Mostly Qualitative. Electrostatics -- Quantitative Formulation. Capacitance-Voltage Characteristics. 17. MOSFETs -- The Essentials. Qualitative Theory of Operation. Quantitative ID - VD Relationships. ac Response. 18. Nonideal MOS. Metal-Semiconductor Workfunction Difference. Oxide Charges. MOSFET Threshold Considerations. 19. Modern FET Structures. Small Dimension Effects. Select Structure Survey. R3. Part III Supplement and Review. Alternative/Supplemental Reading List. Figure Sources/Cited References. Review List of Terms. Part III Review Problem Sets and Answers. Appendix A. Elements of Quantum Mechanics. Appendix B. MOS Semiconductor Electrostatics -- Exact Solution. Appendix C. MOS C-V Supplement. Appendix D. MOS I-Vsupplement. Appendix E. List of Symbols. Appendix M. MATLAB Program Script.

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